Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance
文献类型：期刊论文
| 作者 | Zhao YY(赵玉印) ; He XB(贺晓彬); Gao JF(高建峰); Xu Q(徐强); Li JJ(李俊杰); Hong PZ(洪培真); Meng LK(孟令款); Li CL(李春龙); Liu JB(刘金彪); Jia C(贾宬)
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| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
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| 出版日期 | 2015-03-18 |
| 公开日期 | 2016-05-31 |
| 源URL | [http://10.10.10.126/handle/311049/15031]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhao YY,He XB,Gao JF,et al. Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015. |
| APA | Zhao YY.,He XB.,Gao JF.,Xu Q.,Li JJ.,...&Zhang YB.(2015).Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance.IEEE TRANSACTIONS ON ELECTRON DEVICES. |
| MLA | Zhao YY,et al."Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short-Channel Effects and Enhance Device Performance".IEEE TRANSACTIONS ON ELECTRON DEVICES (2015). |
入库方式： OAI收割
来源：微电子研究所
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