Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications
文献类型：期刊论文
| 作者 | Zhu HL(朱慧珑) ; Liang QQ(梁擎擎); Liu JB(刘金彪); Li JF(李俊峰); Xiang JJ(项金娟); Xu M(许淼); Zhong J(钟健); Chen DP(陈大鹏); Xu WJ(徐唯佳); Ye TC(叶甜春)
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| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
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| 出版日期 | 2015-11-11 |
| 公开日期 | 2016-05-31 |
| 源URL | [http://10.10.10.126/handle/311049/15081]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhu HL,Liang QQ,Liu JB,et al. Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015. |
| APA | Zhu HL.,Liang QQ.,Liu JB.,Li JF.,Xiang JJ.,...&Zhou HJ.(2015).Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES. |
| MLA | Zhu HL,et al."Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications".IEEE TRANSACTIONS ON ELECTRON DEVICES (2015). |
入库方式： OAI收割
来源：微电子研究所
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