Effects of carbon pre-germanidation implantation on the thermal stability of NiGe and dopant segregation on both n- and p-type Ge substrate
文献类型：期刊论文
| 作者 | Zhao C(赵超) ; Liu QB(刘庆波); Wang GL(王桂磊); Duan NY(段宁远); Liu HW(刘宏伟); Luo J(罗军)
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| 刊名 | ECS Journal of Solid State Science and Technology
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| 出版日期 | 2015-02-14 |
| 公开日期 | 2016-05-31 |
| 源URL | [http://10.10.10.126/handle/311049/15089]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhao C,Liu QB,Wang GL,et al. Effects of carbon pre-germanidation implantation on the thermal stability of NiGe and dopant segregation on both n- and p-type Ge substrate[J]. ECS Journal of Solid State Science and Technology,2015. |
| APA | Zhao C,Liu QB,Wang GL,Duan NY,Liu HW,&Luo J.(2015).Effects of carbon pre-germanidation implantation on the thermal stability of NiGe and dopant segregation on both n- and p-type Ge substrate.ECS Journal of Solid State Science and Technology. |
| MLA | Zhao C,et al."Effects of carbon pre-germanidation implantation on the thermal stability of NiGe and dopant segregation on both n- and p-type Ge substrate".ECS Journal of Solid State Science and Technology (2015). |
入库方式： OAI收割
来源：微电子研究所
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