Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device
文献类型：期刊论文
| 作者 | Xu GB(许高博) ; Zhou HJ(周华杰); Zhu HL(朱慧珑); Liu JB(刘金彪); Wang Y(王垚); Liang QQ(梁擎擎); Li JF(李俊峰); Xiang JJ(项金娟); Wu H(吴昊); Xu QX(徐秋霞)
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| 刊名 | Solid-State Electronics
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| 出版日期 | 2016 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Attainment of dual band-edge effective work functions by using a single metal gate and single high k gate dielectric via P/BF2 implantation into a TiN metal gate for HP HKMG CMOS device applications are investigated under a gate-last process flow for the first time. The flat band voltage (VFB) modulations of about 750 mV/570 mV for N-/P-type MOS device with P/BF2 implanted TiN/HfO2/ILSiO2 gate stack are obtained respectively in the experiment range. |
| 源URL | [http://159.226.55.106/handle/172511/16223]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Xu GB,Zhou HJ,Zhu HL,et al. Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device[J]. Solid-State Electronics,2016. |
| APA | Xu GB.,Zhou HJ.,Zhu HL.,Liu JB.,Wang Y.,...&Ye TC.(2016).Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device.Solid-State Electronics. |
| MLA | Xu GB,et al."Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device".Solid-State Electronics (2016). |
入库方式： OAI收割
来源：微电子研究所
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