Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors
文献类型：期刊论文
| 作者 | Wang GL(王桂磊) ; Ye TC(叶甜春); Henry Homayoun Radamson; Zhao C(赵超); Zhu HL(朱慧珑); Yan J(闫江); Yin HX(殷华湘); Li JF(李俊峰); Liu JB(刘金彪); Xu YF(徐烨峰)
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| 刊名 | Nanoscale Research Letters
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| 出版日期 | 2017-02-16 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18098]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wang GL,Ye TC,Henry Homayoun Radamson,et al. Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors[J]. Nanoscale Research Letters,2017. |
| APA | Wang GL.,Ye TC.,Henry Homayoun Radamson.,Zhao C.,Zhu HL.,...&Luo J.(2017).Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.Nanoscale Research Letters. |
| MLA | Wang GL,et al."Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors".Nanoscale Research Letters (2017). |
入库方式： OAI收割
来源：微电子研究所
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