Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs
文献类型：期刊论文
| 作者 | Henry Homayoun Radamson ; Zhu HL(朱慧珑); Yin HX(殷华湘); Qin ZL(秦长亮); Luo J(罗军); Wang GL(王桂磊); Zhao C(赵超)
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| 刊名 | International Journal of High Speed Electronics and Systems
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| 出版日期 | 2017-01-02 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18100]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Henry Homayoun Radamson,Zhu HL,Yin HX,et al. Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs[J]. International Journal of High Speed Electronics and Systems,2017. |
| APA | Henry Homayoun Radamson.,Zhu HL.,Yin HX.,Qin ZL.,Luo J.,...&Zhao C.(2017).Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs.International Journal of High Speed Electronics and Systems. |
| MLA | Henry Homayoun Radamson,et al."Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs".International Journal of High Speed Electronics and Systems (2017). |
入库方式： OAI收割
来源：微电子研究所
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