Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications
文献类型：期刊论文
| 作者 | Liu L(刘磊); Wang GL(王桂磊); Henry Homayoun Radamson |
| 刊名 | Electron Devices Technology and Manufacturing Conference
 |
| 出版日期 | 2017-02-28 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18103]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 推荐引用方式 GB/T 7714 | Liu L,Wang GL,Henry Homayoun Radamson. Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications[J]. Electron Devices Technology and Manufacturing Conference,2017. |
| APA | 刘磊,王桂磊,&Henry Homayoun Radamson.(2017).Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications.Electron Devices Technology and Manufacturing Conference. |
| MLA | 刘磊,et al."Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications".Electron Devices Technology and Manufacturing Conference (2017). |
入库方式： OAI收割
来源：微电子研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。