Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-Dielectrics and SiGe Epitaxial Substrates
文献类型：期刊论文
| 作者 | Zhang QZ(张青竹) ; Wu ZH(吴振华); Yin HX(殷华湘); Wang GL(王桂磊); Hou CZ(侯朝昭); Yao JX(姚佳欣); Xiang JJ(项金娟)
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| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2017-06-05 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18106]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhang QZ,Wu ZH,Yin HX,et al. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-Dielectrics and SiGe Epitaxial Substrates[J]. CHINESE PHYSICS LETTERS,2017. |
| APA | Zhang QZ.,Wu ZH.,Yin HX.,Wang GL.,Hou CZ.,...&Xiang JJ.(2017).Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-Dielectrics and SiGe Epitaxial Substrates.CHINESE PHYSICS LETTERS. |
| MLA | Zhang QZ,et al."Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-Dielectrics and SiGe Epitaxial Substrates".CHINESE PHYSICS LETTERS (2017). |
入库方式： OAI收割
来源：微电子研究所
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