Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure
文献类型：期刊论文
| 作者 | Gu J(顾杰); Hou CZ(侯朝昭); Zhang QZ(张青竹); Yin HX(殷华湘); Xiang JJ(项金娟); Qin ZL(秦长亮); Yao JX(姚佳欣) |
| 刊名 | ECS Journal of Solid State Science and Technology
 |
| 出版日期 | 2017-11-08 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18111]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 推荐引用方式 GB/T 7714 | Gu J,Hou CZ,Zhang QZ,et al. Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure[J]. ECS Journal of Solid State Science and Technology,2017. |
| APA | 顾杰.,侯朝昭.,张青竹.,殷华湘.,项金娟.,...&姚佳欣.(2017).Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure.ECS Journal of Solid State Science and Technology. |
| MLA | 顾杰,et al."Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure".ECS Journal of Solid State Science and Technology (2017). |
入库方式： OAI收割
来源：微电子研究所
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