Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET
文献类型：期刊论文
| 作者 | Wang SK(王盛凯) ; Han K(韩楷); Wang WW(王文武); Ye TC(叶甜春); Zhao C(赵超); Luo J(罗军); Eddy simoen; Xiang JJ(项金娟); Wang XL(王晓磊); Henry H.Radamson
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| 刊名 | IEEE Transactrions on Elelctron Diveces
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| 出版日期 | 2017-04-12 |
| 文献子类 | 期刊论文 |
| 语种 | 英语 |
| 源URL | [http://159.226.55.106/handle/172511/18120]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wang SK,Han K,Wang WW,et al. Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET[J]. IEEE Transactrions on Elelctron Diveces,2017. |
| APA | Wang SK.,Han K.,Wang WW.,Ye TC.,Zhao C.,...&Henry H.Radamson.(2017).Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET.IEEE Transactrions on Elelctron Diveces. |
| MLA | Wang SK,et al."Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET".IEEE Transactrions on Elelctron Diveces (2017). |
入库方式： OAI收割
来源：微电子研究所
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