Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation
文献类型：期刊论文
| 作者 | Ye TC(叶甜春) ; Zhou LX(周丽星); Wang XL(王晓磊); Ma XL(马雪丽); Xiang JJ(项金娟); Yang H(杨红); Zhao C(赵超); Wang WW(王文武)
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| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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| 出版日期 | 2017-05-24 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18132]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Ye TC,Zhou LX,Wang XL,et al. Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2017. |
| APA | Ye TC.,Zhou LX.,Wang XL.,Ma XL.,Xiang JJ.,...&Wang WW.(2017).Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation.JOURNAL OF PHYSICS D-APPLIED PHYSICS. |
| MLA | Ye TC,et al."Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation".JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017). |
入库方式： OAI收割
来源：微电子研究所
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