Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts
文献类型：期刊论文
| 作者 | Ye TC(叶甜春) ; Mao SJ(毛淑娟); Wang GL(王桂磊); Xu J(许静); Luo X(罗雪); Zhang D(张丹); Duan NY(段宁远); Liu S(刘实); Wang WW(王文武); Chen DP(陈大鹏)
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| 刊名 | IEEE Transactions on Electron Devices
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| 出版日期 | 2018-08-08 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/19093]  |
| 专题 | 微电子研究所_集成电路先导工艺研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Ye TC,Mao SJ,Wang GL,et al. Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts[J]. IEEE Transactions on Electron Devices,2018. |
| APA | Ye TC.,Mao SJ.,Wang GL.,Xu J.,Luo X.,...&Jun Luo.(2018).Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts.IEEE Transactions on Electron Devices. |
| MLA | Ye TC,et al."Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts".IEEE Transactions on Electron Devices (2018). |
入库方式： OAI收割
来源：微电子研究所
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