A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up
文献类型：期刊论文
| 作者 | Tian XL(田晓丽); Lu SJ(卢烁今); Teng Y(腾渊); Shen QX(沈千行); Zhang GY(张广银); Tan J(谭骥); Yang F(杨飞) |
| 刊名 | IEEE Electron Device Letters
 |
| 出版日期 | 2016-07-22 |
| 文献子类 | 期刊论文 |
| 英文摘要 | The insulated-gate bipolar transistor (IGBT) has a parasitic thyristor. Latch-up can occur when the current density exceeds a particular current density. Conventional methods employed to increase the latching current density will lead to some other performance degradations.To overcome these problems and further increase the latching current density of IGBT, a novel IGBT with a floating N-doped buried layer in P-base is proposed. |
| 源URL | [http://159.226.55.106/handle/172511/16260]  |
| 专题 | 微电子研究所_新技术开发部 |
| 推荐引用方式 GB/T 7714 | Tian XL,Lu SJ,Teng Y,et al. A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up[J]. IEEE Electron Device Letters,2016. |
| APA | 田晓丽.,卢烁今.,腾渊.,沈千行.,张广银.,...&杨飞.(2016).A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up.IEEE Electron Device Letters. |
| MLA | 田晓丽,et al."A Novel IGBT Structure With Floating N-Doped Buried Layer in P-base to Suppress Latch-Up".IEEE Electron Device Letters (2016). |
入库方式： OAI收割
来源：微电子研究所
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