Low-Temperature Wafer Bonding Based on Gold-Induced Crystallization of Amorphous Silicon
文献类型：期刊论文
| 作者 | Jing, ER ; Xiong, B ; Wang, YL |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:9页码:1011-1013 |
| 关键词 | INDUCED LATERAL CRYSTALLIZATION METAL-INDUCED CRYSTALLIZATION THIN-FILM ALUMINUM |
| ISSN号 | 0741-3106 |
| 通讯作者 | Jing, ER, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-12-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/38379]  |
| 专题 | 上海微系统与信息技术研究所_微系统技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jing, ER,Xiong, B,Wang, YL. Low-Temperature Wafer Bonding Based on Gold-Induced Crystallization of Amorphous Silicon[J]. IEEE ELECTRON DEVICE LETTERS,2010,31(9):1011-1013. |
| APA | Jing, ER,Xiong, B,&Wang, YL.(2010).Low-Temperature Wafer Bonding Based on Gold-Induced Crystallization of Amorphous Silicon.IEEE ELECTRON DEVICE LETTERS,31(9),1011-1013. |
| MLA | Jing, ER,et al."Low-Temperature Wafer Bonding Based on Gold-Induced Crystallization of Amorphous Silicon".IEEE ELECTRON DEVICE LETTERS 31.9(2010):1011-1013. |
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