中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

文献类型:期刊论文

作者Ou, X ; Das Kanungo, P ; Kogler, R ; Werner, P ; Gosele, U ; Skorupa, W ; Wang, X
刊名ADVANCED MATERIALS
出版日期2010
卷号22期号:36页码:4020-4024
关键词MOLECULAR-BEAM EPITAXY SILICON NANOWIRES ELECTRICAL-PROPERTIES SURFACE SEGREGATION DIAMOND TIPS GROWTH RESOLUTION GERMANIUM DENSITY
ISSN号0935-9648
通讯作者Ou, X, Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany
学科主题Chemistry ; Multidisciplinary; Chemistry ; Physical; Nanoscience & Nanotechnology; Materials Science ; Multidisciplinary; Physics ; Applied; Physics ; Condensed Matter
收录类别SCI
公开日期2011-12-17
源URL[http://ir.sim.ac.cn/handle/331004/38381]  
专题上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式
GB/T 7714
Ou, X,Das Kanungo, P,Kogler, R,et al. Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy[J]. ADVANCED MATERIALS,2010,22(36):4020-4024.
APA Ou, X.,Das Kanungo, P.,Kogler, R.,Werner, P.,Gosele, U.,...&Wang, X.(2010).Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy.ADVANCED MATERIALS,22(36),4020-4024.
MLA Ou, X,et al."Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy".ADVANCED MATERIALS 22.36(2010):4020-4024.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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