Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy
文献类型:期刊论文
作者 | Ou, X ; Das Kanungo, P ; Kogler, R ; Werner, P ; Gosele, U ; Skorupa, W ; Wang, X |
刊名 | ADVANCED MATERIALS
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出版日期 | 2010 |
卷号 | 22期号:36页码:4020-4024 |
关键词 | MOLECULAR-BEAM EPITAXY SILICON NANOWIRES ELECTRICAL-PROPERTIES SURFACE SEGREGATION DIAMOND TIPS GROWTH RESOLUTION GERMANIUM DENSITY |
ISSN号 | 0935-9648 |
通讯作者 | Ou, X, Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany |
学科主题 | Chemistry ; Multidisciplinary; Chemistry ; Physical; Nanoscience & Nanotechnology; Materials Science ; Multidisciplinary; Physics ; Applied; Physics ; Condensed Matter |
收录类别 | SCI |
公开日期 | 2011-12-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/38381] ![]() |
专题 | 上海微系统与信息技术研究所_微系统技术_期刊论文 |
推荐引用方式 GB/T 7714 | Ou, X,Das Kanungo, P,Kogler, R,et al. Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy[J]. ADVANCED MATERIALS,2010,22(36):4020-4024. |
APA | Ou, X.,Das Kanungo, P.,Kogler, R.,Werner, P.,Gosele, U.,...&Wang, X.(2010).Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy.ADVANCED MATERIALS,22(36),4020-4024. |
MLA | Ou, X,et al."Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy".ADVANCED MATERIALS 22.36(2010):4020-4024. |
入库方式: OAI收割
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