Memory characteristics of Ni-NiOx core-shell nanocrystals embedded in SiO2 gate oxide for nonvolatile flash devices
文献类型：期刊论文
| 作者 | Ni, H ; Wu, L ; Song, Z ; Hui, C |
| 刊名 | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
 |
| 出版日期 | 2010 |
| 卷号 | 12期号:6页码:1306-1310 |
| 关键词 | SEMICONDUCTOR CAPACITORS SILICON NANOCRYSTALS THERMAL-OXIDATION GE NANOCRYSTALS METAL TRANSISTORS |
| ISSN号 | 1454-4164 |
| 通讯作者 | Ni, H, Shanghai Jiao Tong Univ, Res Inst Micro Nano Sci & Technol, Shanghai 200030, Peoples R China |
| 学科主题 | Materials Science, Multidisciplinary; Optics; Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-12-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/38399]  |
| 专题 | 上海微系统与信息技术研究所_微系统技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ni, H,Wu, L,Song, Z,et al. Memory characteristics of Ni-NiOx core-shell nanocrystals embedded in SiO2 gate oxide for nonvolatile flash devices[J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2010,12(6):1306-1310. |
| APA | Ni, H,Wu, L,Song, Z,&Hui, C.(2010).Memory characteristics of Ni-NiOx core-shell nanocrystals embedded in SiO2 gate oxide for nonvolatile flash devices.JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,12(6),1306-1310. |
| MLA | Ni, H,et al."Memory characteristics of Ni-NiOx core-shell nanocrystals embedded in SiO2 gate oxide for nonvolatile flash devices".JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12.6(2010):1306-1310. |
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