On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon
文献类型:期刊论文
作者 | Bao, XQ ; Ge, DH ; Zhang, S ; Zhao, L ; Jiao, JW ; Wang, YL |
刊名 | CHINESE SCIENCE BULLETIN
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出版日期 | 2009 |
卷号 | 54期号:7页码:1143-1151 |
关键词 | P-TYPE SILICON POROUS SILICON MACROPORE FORMATION FORMATION MECHANISMS ANODIC-DISSOLUTION STABILITY ANALYSIS MORPHOLOGY PHYSICS SI DENSITY |
ISSN号 | 1001-6538 |
通讯作者 | Jiao, JW, Chinese Acad Sci, State Key Lab Transducer Technol, Natl Key Lab Microsyst Technol, Shanghai Inst Microsyst & Informat, Shanghai 200050, Peoples R China |
学科主题 | Multidisciplinary Sciences |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2011-12-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/38481] ![]() |
专题 | 上海微系统与信息技术研究所_微系统技术_期刊论文 |
推荐引用方式 GB/T 7714 | Bao, XQ,Ge, DH,Zhang, S,et al. On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon[J]. CHINESE SCIENCE BULLETIN,2009,54(7):1143-1151. |
APA | Bao, XQ,Ge, DH,Zhang, S,Zhao, L,Jiao, JW,&Wang, YL.(2009).On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon.CHINESE SCIENCE BULLETIN,54(7),1143-1151. |
MLA | Bao, XQ,et al."On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon".CHINESE SCIENCE BULLETIN 54.7(2009):1143-1151. |
入库方式: OAI收割
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