中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon

文献类型:期刊论文

作者Bao, XQ ; Ge, DH ; Zhang, S ; Zhao, L ; Jiao, JW ; Wang, YL
刊名CHINESE SCIENCE BULLETIN
出版日期2009
卷号54期号:7页码:1143-1151
关键词P-TYPE SILICON POROUS SILICON MACROPORE FORMATION FORMATION MECHANISMS ANODIC-DISSOLUTION STABILITY ANALYSIS MORPHOLOGY PHYSICS SI DENSITY
ISSN号1001-6538
通讯作者Jiao, JW, Chinese Acad Sci, State Key Lab Transducer Technol, Natl Key Lab Microsyst Technol, Shanghai Inst Microsyst & Informat, Shanghai 200050, Peoples R China
学科主题Multidisciplinary Sciences
收录类别SCI
语种英语
公开日期2011-12-17
源URL[http://ir.sim.ac.cn/handle/331004/38481]  
专题上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式
GB/T 7714
Bao, XQ,Ge, DH,Zhang, S,et al. On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon[J]. CHINESE SCIENCE BULLETIN,2009,54(7):1143-1151.
APA Bao, XQ,Ge, DH,Zhang, S,Zhao, L,Jiao, JW,&Wang, YL.(2009).On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon.CHINESE SCIENCE BULLETIN,54(7),1143-1151.
MLA Bao, XQ,et al."On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon".CHINESE SCIENCE BULLETIN 54.7(2009):1143-1151.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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