中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Post-CMOS micromachined nickel tunable-capacitors with a large tuning-range under low actuating voltage

文献类型:期刊论文

作者Gu, L ; Wu, ZZ ; Li, XX
刊名MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
出版日期2008
卷号50期号:9页码:2469-2472
关键词RF-MEMS
ISSN号0895-2477
通讯作者Li, XX, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
学科主题Engineering, Electrical & Electronic; Optics
收录类别SCI
语种英语
公开日期2011-12-17
源URL[http://ir.sim.ac.cn/handle/331004/38533]  
专题上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式
GB/T 7714
Gu, L,Wu, ZZ,Li, XX. Post-CMOS micromachined nickel tunable-capacitors with a large tuning-range under low actuating voltage[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,2008,50(9):2469-2472.
APA Gu, L,Wu, ZZ,&Li, XX.(2008).Post-CMOS micromachined nickel tunable-capacitors with a large tuning-range under low actuating voltage.MICROWAVE AND OPTICAL TECHNOLOGY LETTERS,50(9),2469-2472.
MLA Gu, L,et al."Post-CMOS micromachined nickel tunable-capacitors with a large tuning-range under low actuating voltage".MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 50.9(2008):2469-2472.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。