中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The complex correlation between current density and pore density based on non-SCR effects

文献类型:期刊论文

作者Bao, XQ ; Jiao, JW ; Wang, YL
刊名ELECTROCHEMISTRY COMMUNICATIONS
出版日期2007
卷号9期号:8页码:1991-1997
关键词N-TYPE SILICON POROUS SILICON MACROPORE FORMATION STABILITY ANALYSIS MORPHOLOGY PHYSICS MECHANISM LIMITS
ISSN号1388-2481
通讯作者Jiao, JW, Chinese Acad Sci, Shanghai Inst Microsyst & Informat, Natl Key Lab Microsyst Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
学科主题Electrochemistry
收录类别SCI
语种英语
公开日期2011-12-17
源URL[http://ir.sim.ac.cn/handle/331004/38640]  
专题上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式
GB/T 7714
Bao, XQ,Jiao, JW,Wang, YL. The complex correlation between current density and pore density based on non-SCR effects[J]. ELECTROCHEMISTRY COMMUNICATIONS,2007,9(8):1991-1997.
APA Bao, XQ,Jiao, JW,&Wang, YL.(2007).The complex correlation between current density and pore density based on non-SCR effects.ELECTROCHEMISTRY COMMUNICATIONS,9(8),1991-1997.
MLA Bao, XQ,et al."The complex correlation between current density and pore density based on non-SCR effects".ELECTROCHEMISTRY COMMUNICATIONS 9.8(2007):1991-1997.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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