Giant Piezoresistance Measured in n-Type Nanothick Si Layer That Has Interface With SiO2
文献类型：期刊论文
| 作者 | Yang,YL ; Li,XX |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 32期号:3页码:411-413 |
| 关键词 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| ISSN号 | 0741-3106 |
| 学科主题 | Engineering ; Electrical & Electronic |
| 公开日期 | 2012-04-12 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/106880]  |
| 专题 | 上海微系统与信息技术研究所_微系统技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang,YL,Li,XX. Giant Piezoresistance Measured in n-Type Nanothick Si Layer That Has Interface With SiO2[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(3):411-413. |
| APA | Yang,YL,&Li,XX.(2011).Giant Piezoresistance Measured in n-Type Nanothick Si Layer That Has Interface With SiO2.IEEE ELECTRON DEVICE LETTERS,32(3),411-413. |
| MLA | Yang,YL,et al."Giant Piezoresistance Measured in n-Type Nanothick Si Layer That Has Interface With SiO2".IEEE ELECTRON DEVICE LETTERS 32.3(2011):411-413. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。