Fabrication of Schottky Barrier Carbon Nanotube Field Effect Transistors Using Dielectrophoretic-Based Manipulation
文献类型：期刊论文
| 作者 | Yu HB(于海波) ; Tian XJ(田孝军); Dong ZL(董再励); Li WJ(李文荣)
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| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
 |
| 出版日期 | 2010 |
| 卷号 | 10期号:11页码:7000-7004 |
| 关键词 | Carbon Nanotubes Dielectrophoretic Field Effect Transistors Schottky Barrier |
| ISSN号 | 1533-4880 |
| 产权排序 | 1 |
| 通讯作者 | 李文荣 |
| 中文摘要 | Nanoscale electronic devices made from carbon nanotubes (CNTs) such as transistors and sensors are much smaller and potentially more versatile than those built using conventional IC technology. In this paper, we present a method that uses dielectrophoretic (DEP) manipulation process for the fabrication of single-channel and multi-channel carbon nanotube field effect transistors (CNT-FETs). For a typical fabrication process, single-walled carbon nanotubes (SWCNTs) are first pre-aligned to micron-precision range between two microelectrodes using DEP technique. The typically applied alternating current (AC) voltage to generate the DEP force for manipulation has a frequency of 1 MHz and amplitude of 10 V. We first demonstrated single-channel or multi-channel structures of CNT-FETs. An AFM is then used to "clean" or "sweep away" unwanted particles or CNTs around the electrodes. Lastly, the fabricated FETs were covered in a polymethylmethacrylate (PMMA) thin film and treated with an annealing process. The PMMA covered devices show improved performances over the non-covered devices. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 研究领域[WOS] | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 收录类别 | SCI ; EI ; CPCI（ISTP） |
| 语种 | 英语 |
| WOS记录号 | WOS:000283621300002 |
| 公开日期 | 2012-05-29 |
| 源URL | [http://ir.sia.cn/handle/173321/7351]  |
| 专题 | 沈阳自动化研究所_机器人学研究室 |
| 推荐引用方式 GB/T 7714 | Yu HB,Tian XJ,Dong ZL,et al. Fabrication of Schottky Barrier Carbon Nanotube Field Effect Transistors Using Dielectrophoretic-Based Manipulation[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2010,10(11):7000-7004. |
| APA | Yu HB,Tian XJ,Dong ZL,&Li WJ.(2010).Fabrication of Schottky Barrier Carbon Nanotube Field Effect Transistors Using Dielectrophoretic-Based Manipulation.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,10(11),7000-7004. |
| MLA | Yu HB,et al."Fabrication of Schottky Barrier Carbon Nanotube Field Effect Transistors Using Dielectrophoretic-Based Manipulation".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 10.11(2010):7000-7004. |
入库方式： OAI收割
来源：沈阳自动化研究所
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