Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling
文献类型:期刊论文
作者 | Huang, Wenchao ; Xia, Hui ; Wang, Shaowei ; Deng, Honghai ; Wei, Peng ; Li, Lu ; Liu, Fengqi ; Li, Zhifeng ; Li, Tianxin |
刊名 | proceedings of spie- the international society for optical engineering |
出版日期 | 2011 |
卷号 | 8308页码:83081y |
ISSN号 | 0277786x |
关键词 | Capacitance Carrier concentration Characterization Diffusion Optoelectronic devices Photodetectors Scanning Semiconductor device structures Semiconductor devices Semiconductor quantum wells Thermionic emission |
通讯作者 | huang, w.(wc_huang@mail.sitp.ac.cn) |
学科主题 | 半导体材料 |
收录类别 | EI |
语种 | 英语 |
公开日期 | 2012-06-14 |
源URL | [http://ir.semi.ac.cn/handle/172111/23125] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Huang, Wenchao,Xia, Hui,Wang, Shaowei,et al. Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling[J]. proceedings of spie- the international society for optical engineering,2011,8308:83081y. |
APA | Huang, Wenchao.,Xia, Hui.,Wang, Shaowei.,Deng, Honghai.,Wei, Peng.,...&Li, Tianxin.(2011).Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling.proceedings of spie- the international society for optical engineering,8308,83081y. |
MLA | Huang, Wenchao,et al."Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling".proceedings of spie- the international society for optical engineering 8308(2011):83081y. |
入库方式: OAI收割
来源:半导体研究所
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