中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling

文献类型:期刊论文

作者Huang, Wenchao ; Xia, Hui ; Wang, Shaowei ; Deng, Honghai ; Wei, Peng ; Li, Lu ; Liu, Fengqi ; Li, Zhifeng ; Li, Tianxin
刊名proceedings of spie- the international society for optical engineering
出版日期2011
卷号8308页码:83081y
ISSN号0277786x
关键词Capacitance Carrier concentration Characterization Diffusion Optoelectronic devices Photodetectors Scanning Semiconductor device structures Semiconductor devices Semiconductor quantum wells Thermionic emission
通讯作者huang, w.(wc_huang@mail.sitp.ac.cn)
学科主题半导体材料
收录类别EI
语种英语
公开日期2012-06-14
源URL[http://ir.semi.ac.cn/handle/172111/23125]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Huang, Wenchao,Xia, Hui,Wang, Shaowei,et al. Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling[J]. proceedings of spie- the international society for optical engineering,2011,8308:83081y.
APA Huang, Wenchao.,Xia, Hui.,Wang, Shaowei.,Deng, Honghai.,Wei, Peng.,...&Li, Tianxin.(2011).Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling.proceedings of spie- the international society for optical engineering,8308,83081y.
MLA Huang, Wenchao,et al."Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling".proceedings of spie- the international society for optical engineering 8308(2011):83081y.

入库方式: OAI收割

来源:半导体研究所

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