集成电路凸点封装设备离心腔体与热处理单元气流及热场研究
文献类型：学位论文
| 作者 | 王靖震
|
| 学位类别 | 博士 |
| 答辩日期 | 2011-12-06 |
| 授予单位 | 中国科学院沈阳自动化研究所 |
| 授予地点 | 中国科学院沈阳自动化研究所 |
| 导师 | 刘伟军 |
| 关键词 | 有限元分析 回归设计 数学模型 滑膜变结构控制 |
| 其他题名 | Research on The Airflow Field of Centrifugal Chamber and Temperature Field of Heat Treatment Unit in The IC Bump Packaging Equipment |
| 学位专业 | 机械电子工程 |
| 中文摘要 | 随着半导体技术的不断发展，集成电路以压缩线宽、提高密度来提升产品性能的模式遭受到了严峻的挑战。大规模集成电路开始向着多核化、立体化的方向发展。先进的封装技术一改过去封装产业在整个半导体行业中的从属地位，逐渐成为集成电路制造工艺中不可或缺的核心制程。凸点封装技术作为一种主流的先进封装技术正在得到越来越广泛的应用。 本文所研究课题“集成电路凸点封装设备离心腔体与热处理单元气流及热场研究”来源于“极大规模集成电路制造装备及成套工艺” 国家科技重大专项项目“凸点封装涂胶、显影、单片湿法刻蚀设备的开发与产业化”的子课题（2009ZX02008-003）。研究分为三个方面，即：热处理单元热板设计参数的数学模型、热板的温度控制技术和离心腔体气流场的分布情况。研究中揭示了凸点封装设备设计参数及工艺参数对设备性能指标的影响情况，建立了相关设计参数及工艺参数的数学模型，设计和改进了热板温度控制的算法，为工程设计人员在进行集成电路凸点封装设备的设计和工艺操作中提供理论上的指导。这将会对集成电路凸点封装制造业在我国的发展起到直接的促进作用。 对离心腔体的气流场和热处理单元的热场进行研究，通常意味着要进行许多实际的物理试验，需要大量的耗费、周期长、成本高。在本文的研究中大量使用了计算机仿真模拟的方法和回归设计的方法，有效的克服了以上的缺点。本文的主要研究内容和贡献如下： 1、研究了热板温度场的有限元模型的建模与分析。提出了采用热板温度场有限元模型对热板进行仿真模拟分析的方法。首先根据传热学的相关理论对热板的传热过程进行了分析。随后应用有限元分析软件ANSYS对热板结构模型进行网格划分，参数化建模，以及在有限元模拟结果的后处理中采用路径映射的方法对结果的数据进行提取和计算。最后，经过实验验证了所建立的热板温度场有限元模型的有效性后，采用热板温度场有限元模型对热板设计参数进行了单因素分析。 2、为了从理论上指导工程设计人员，并为工程设计人员提供用于热板设计的数学模型工具，分别应用了回归正交设计方法和均匀设计方法，针对在热板设计中的不同情况，对热板设计参数进行分析和建立数学模型。通过以上回归设计方法的应用，由浅入深的揭示了热板设计参数的影响情况。 3、研究了热处理单元热板的控制算法。针对热板温度控制中的扰动问题，采用滑膜变结构控制技术对热板温度进行控制。有效抑制了控制过程中的干扰，并同时使热板温度控制的响应速度得到提高。 4、研究了离心腔体的气流场工艺参数对气流分布的影响情况以及相关工艺参数的数学模型。采用FLUENT计算流体力学软件分析了离心腔体气流场的工艺参数，即显影、涂胶和刻蚀腔体的气流场工艺参数。其中在刻蚀腔体气流场的研究中，需要对刻蚀腔体气流场中“有”还是“无”涡流的二分类问题进行分析判断。研究中采用Logistic回归分析的方法有效的解决了这一二分类判断问题，并得到相应的数学模型。 |
| 索取号 | TN47/W33/2011 |
| 英文摘要 | With the development of semiconductor technology, the way of enhancing the performance by compressing the line width of the integrated circuit and increasing the density of the integrated circuit, is facing a serious challenge. The large scale integrated circuits began to develop in the multi-core and three-dimensional direction. Now, in the semiconductor industry, the advanced packaging technology is not any more in a subordinate position. Furthermore, advanced packaging technology is becoming a core process in the semiconductor industry. And, as a kind of mainstream advanced packaging technology, bump packaging technology is more and more widely used. This research “Research on The Airflow Field of Centrifugal Chamber and Temperature Field of Heat Treatment Unit in The IC Bump Packaging Equipment” is a part of Chinese National Science and Technique Great Project “Very Large Scale Integrated Circuit Manufacturing Equipment and Whole Process”.(Project No. 2009ZX02008-003). There are three parts in this research, that is, the mathematical models of design parameters of heat treatment unit hot plate, the technology of hot plate temperature control and the airflow field of centrifugal chamber. In this research, the effects of the process parameters of bump packaging equipment were revealed, and mathematical models about the related process parameters were established, the temperature control algorithm of hot plate was designed and improved. Then designers and operators of bump packaging equipment can be guided by the research. This research will promote the development of the integrated circuit packaging industry in China. Usually, the analysis of heat treatment unit and centrifugal chamber means a lot of actual physical tests, long cycle and high cost. The computer simulation technology and regression design method were largely used in the research to effectively overcome the above drawbacks. This specific study done as follows: 1. A finite element analysis model of heat treatment unit hot plate temperature field was established. According to the heat transfer theory, the heat transfer process of hot plate was analyzed. Finite element analysis software ANSYS was used to mesh the hot plate model; and a parameterized model of finite element analysis was built; the path mapping techniques was used to get data from the hot-plate finite element analysis results in the post-processing. Finally, the validity of the hot plate temperature field model was confirmed by experiment, finite element model was used to the single factor analysis of hotplate design parameters. 2. In order to provide the theoretical guidance to engineering staff, the mathematical models of hot plate design parameters was established. For the different situation in the hot plate design, the orthogonal experimental design method and the uniform design method was respectively used to analyze the hot plate design parameters and to build the models of design parameters. The effects of the design parameters of hot plate was revealed progressively by using regression design method. 3. The control algorithm of hot plate was researched. To the problem of disturbance during the hot plate temperature control, a sliding mode control algorithm of hot plate temperature control system was developed, in the end, the disturbance was rejected effectively by using this control algorithm， and the response of the hot plate temperature control system is improved. 4. The impacts of the process parameters on centrifugal chamber airflow field were researched and a mathematical model of relevant process parameters was studied. The process parameters of centrifugal chambers, that is, the process parameters of developing chamber，coating chamber and etching chamber were analyzed by using FLUENT CFD software. In the analysis of etching chamber airflow field, a two-group classification problem need to be solved, that is, whether there is vortex or not in the etching chamber airflow field.. Logistic regression method was used, then, the problem was solved perfect and a mathematical model was obtained. |
| 语种 | 中文 |
| 公开日期 | 2012-07-27 |
| 产权排序 | 1 |
| 分类号 | TN47 |
| 源URL | [http://ir.sia.ac.cn/handle/173321/9303]  |
| 专题 | 沈阳自动化研究所_装备制造技术研究室 |
| 推荐引用方式 GB/T 7714 | 王靖震. 集成电路凸点封装设备离心腔体与热处理单元气流及热场研究[D]. 中国科学院沈阳自动化研究所. 中国科学院沈阳自动化研究所. 2011. |
入库方式： OAI收割
来源：沈阳自动化研究所
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