In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire
文献类型：期刊论文
| 作者 | Gong, Yibin ; Dai, Pengfei ; Gao, Anran ; Li,T ; Zhou, Ping ; Wang,YL |
| 刊名 | Journal of Semiconductors.
 |
| 出版日期 | 2011 |
| 卷号 | 32期号:12页码:12303 |
| ISSN号 | 16744926 |
| 通讯作者 | Wang, Y.(ylwang@mail.sim.ac.cn) |
| 收录类别 | EI-105 |
| 语种 | 英语 |
| 公开日期 | 2012-08-23 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/109227]  |
| 专题 | 上海微系统与信息技术研究所_微系统技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gong, Yibin,Dai, Pengfei,Gao, Anran,et al. In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire[J]. Journal of Semiconductors.,2011,32(12):12303. |
| APA | Gong, Yibin,Dai, Pengfei,Gao, Anran,Li,T,Zhou, Ping,&Wang,YL.(2011).In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire.Journal of Semiconductors.,32(12),12303. |
| MLA | Gong, Yibin,et al."In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire".Journal of Semiconductors. 32.12(2011):12303. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。