中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis

文献类型:期刊论文

作者MA, Laipeng; REN, Wencai; Dong ZL(董再励); Liu LQ(刘连庆); CHENG HuiMing
刊名CHINESE SCIENCE BULLETIN
出版日期2012
卷号57期号:23页码:2995-2999
关键词graphene controlled growth chemical vapor deposition copper substrate
ISSN号1001-6538
产权排序2
通讯作者MA, Laipeng
中文摘要Recently, chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and highquality monolayer graphene. In this paper, we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth of grapheme in future, including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders.
WOS标题词Science & Technology
类目[WOS]Multidisciplinary Sciences
研究领域[WOS]Science & Technology - Other Topics
关键词[WOS]BILAYER GRAPHENE ; LAYER GRAPHENE ; FILMS ; CU(111) ; FOILS
收录类别SCI
语种英语
WOS记录号WOS:000307277800006
公开日期2012-10-24
源URL[http://ir.sia.cn/handle/173321/10032]  
专题沈阳自动化研究所_机器人学研究室
推荐引用方式
GB/T 7714
MA, Laipeng,REN, Wencai,Dong ZL,et al. Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis[J]. CHINESE SCIENCE BULLETIN,2012,57(23):2995-2999.
APA MA, Laipeng,REN, Wencai,Dong ZL,Liu LQ,&CHENG HuiMing.(2012).Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis.CHINESE SCIENCE BULLETIN,57(23),2995-2999.
MLA MA, Laipeng,et al."Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis".CHINESE SCIENCE BULLETIN 57.23(2012):2995-2999.

入库方式: OAI收割

来源:沈阳自动化研究所

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