Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis
文献类型：期刊论文
| 作者 | MA, Laipeng; REN, Wencai; Dong ZL(董再励) ; Liu LQ(刘连庆); CHENG HuiMing
|
| 刊名 | CHINESE SCIENCE BULLETIN
 |
| 出版日期 | 2012 |
| 卷号 | 57期号:23页码:2995-2999 |
| 关键词 | graphene controlled growth chemical vapor deposition copper substrate |
| ISSN号 | 1001-6538 |
| 产权排序 | 2 |
| 通讯作者 | MA, Laipeng |
| 中文摘要 | Recently, chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and highquality monolayer graphene. In this paper, we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth of grapheme in future, including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders. |
| WOS标题词 | Science & Technology |
| 类目[WOS] | Multidisciplinary Sciences |
| 研究领域[WOS] | Science & Technology - Other Topics |
| 关键词[WOS] | BILAYER GRAPHENE ; LAYER GRAPHENE ; FILMS ; CU(111) ; FOILS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000307277800006 |
| 公开日期 | 2012-10-24 |
| 源URL | [http://ir.sia.cn/handle/173321/10032]  |
| 专题 | 沈阳自动化研究所_机器人学研究室 |
| 推荐引用方式 GB/T 7714 | MA, Laipeng,REN, Wencai,Dong ZL,et al. Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis[J]. CHINESE SCIENCE BULLETIN,2012,57(23):2995-2999. |
| APA | MA, Laipeng,REN, Wencai,Dong ZL,Liu LQ,&CHENG HuiMing.(2012).Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis.CHINESE SCIENCE BULLETIN,57(23),2995-2999. |
| MLA | MA, Laipeng,et al."Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis".CHINESE SCIENCE BULLETIN 57.23(2012):2995-2999. |
入库方式： OAI收割
来源：沈阳自动化研究所
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