Wafer level approaches for the integration of carbon nanotubes in electronic and sensor applications
文献类型:会议论文
作者 | Hermann, Sascha; Fiedler, Holge; Yu HB(于海波)![]() |
出版日期 | 2012 |
会议名称 | 9th International Multi-Conference on Systems, Signals and Devices, SSD 2012 |
会议日期 | March 20-23, 2012 |
会议地点 | Chemnitz, Germany |
关键词 | Chemical vapor deposition Optical interconnects Sensors |
页码 | 5 pp. |
中文摘要 | In this work we give an overview about recent developments in the integration technology of CNTs. We focus on wafer level approaches with the CVD and DEP method for growing as well as depositing CNTs in a defined way. So that we present methods to manipulate CNT growth structure, growth mode as well as growth inhibition in thermal CVD processes. This is highlighted by a unique growth structure opening new possibilities for CNT integration. Likewise, we show recent developments in scaling up the DEP method on wafer level. We round it up with the fabrication of CNT vias and MEMS structures containing CNT sensor elements. |
收录类别 | EI |
产权排序 | 2 |
会议录 | International Multi-Conference on Systems, Signals and Devices, SSD 2012 - Summary Proceedings
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会议录出版者 | IEEE Computer Society |
会议录出版地 | Piscataway, NJ |
语种 | 英语 |
ISBN号 | 978-1-4673-1590-6 |
源URL | [http://ir.sia.cn/handle/173321/9879] ![]() |
专题 | 沈阳自动化研究所_机器人学研究室 |
推荐引用方式 GB/T 7714 | Hermann, Sascha,Fiedler, Holge,Yu HB,et al. Wafer level approaches for the integration of carbon nanotubes in electronic and sensor applications[C]. 见:9th International Multi-Conference on Systems, Signals and Devices, SSD 2012. Chemnitz, Germany. March 20-23, 2012. |
入库方式: OAI收割
来源:沈阳自动化研究所
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