Contacts to III-V semiconductors
文献类型:专利
作者 | KOSZI, LOUIS A. |
发表日期 | 1988-02-02 |
专利号 | USH434 |
著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Contacts to III-V semiconductors |
英文摘要 | A contact structure and method of bonding III-V semiconductors which prevents shorting of the edges of the semiconductor chip and also allows the chip to be bonded with either major surface facing upward. Both surfaces include a gold pad surrounded by a material which is immiscible with the preform metal used to bond the chip to an outside surface. During fluxless bonding between the gold pad on one surface of the chip and the preform, the preform metal is prevented from wetting the edges of the chip. The opposite surface of the chip can be electrically contacted by wire bonding to the gold pad on that surface. |
公开日期 | 1988-02-02 |
申请日期 | 1985-02-15 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/35813] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
推荐引用方式 GB/T 7714 | KOSZI, LOUIS A.. Contacts to III-V semiconductors. USH434. 1988-02-02. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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