中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Contacts to III-V semiconductors

文献类型:专利

作者KOSZI, LOUIS A.
发表日期1988-02-02
专利号USH434
著作权人BELL TELEPHONE LABORATORIES, INCORPORATED
国家美国
文献子类授权发明
其他题名Contacts to III-V semiconductors
英文摘要A contact structure and method of bonding III-V semiconductors which prevents shorting of the edges of the semiconductor chip and also allows the chip to be bonded with either major surface facing upward. Both surfaces include a gold pad surrounded by a material which is immiscible with the preform metal used to bond the chip to an outside surface. During fluxless bonding between the gold pad on one surface of the chip and the preform, the preform metal is prevented from wetting the edges of the chip. The opposite surface of the chip can be electrically contacted by wire bonding to the gold pad on that surface.
公开日期1988-02-02
申请日期1985-02-15
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/35813]  
专题半导体激光器专利数据库
作者单位BELL TELEPHONE LABORATORIES, INCORPORATED
推荐引用方式
GB/T 7714
KOSZI, LOUIS A.. Contacts to III-V semiconductors. USH434. 1988-02-02.

入库方式: OAI收割

来源:西安光学精密机械研究所

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