Bonding scheme using group VB metallic layer
文献类型：专利
| 作者 | BACON, DONALD D.; CHEN, CHENG-HSUAN; CHEN, HO S.; KATZ, AVISHAY; TAI, KING L. |
| 发表日期 | 1997-04-22 |
| 专利号 | US5622305 |
| 著作权人 | BELL SEMICONDUCTOR, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Bonding scheme using group VB metallic layer |
| 英文摘要 | A method for bonding one body to another, such as a laser device to a submount, uses a metallic layer composed of a Group VB metal, such as niobium, sandwiched between a non-metallic layer and solder layer formed by an approximate Au-Sn eutectic layer. Advantageously the Group VB layer is formed at a submount temperature of less than approximately 201 DEG C., advantageously less than approximately 125 DEG C., and preferably less than approximately 101 DEG C.-advantageously to a thickness in the approximate range 0.05 mu m to 0.2 mu m, or even thinner if pinholes do not develop. The non-metallic layer is located on one of the bodies, and the other body has a metallic coating advantageously capped with an Au layer. |
| 公开日期 | 1997-04-22 |
| 申请日期 | 1995-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36252]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL SEMICONDUCTOR, LLC |
| 推荐引用方式 GB/T 7714 | BACON, DONALD D.,CHEN, CHENG-HSUAN,CHEN, HO S.,et al. Bonding scheme using group VB metallic layer. US5622305. 1997-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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