Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices
文献类型：专利
| 作者 | TSONG, IGNATIUS S. T.; SMITH, DAVID J.; TORRES, VICTOR M.; EDWARDS, JR., JOHN L.; DOAK, R. BRUCE |
| 发表日期 | 2001-10-23 |
| 专利号 | US6306675 |
| 著作权人 | ARIZONA BOARD OF REGENTS ACTING ON BEHALF OF ARIZONA STATE UNIVERSITY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices |
| 英文摘要 | In semiconductor devices such as laser diodes (LD) and light emitting diodes (LED) based on gallium nitride thin films, low defect density is desired in the gallium nitride film. In the fabrication of such devices on a silicon carbide substrate surface, the gallium nitride film is formed on the silicon carbide substrate after the substrate surface is etched using hydrogen at an elevated temperature. In another embodiment, an aluminum nitride film is formed as a buffer layer between the gallium nitride film and the silicon carbide substrate, and, prior to aluminum nitride formation, the substrate surface is etched using hydrogen at an elevated temperature. |
| 公开日期 | 2001-10-23 |
| 申请日期 | 1999-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40140]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ARIZONA BOARD OF REGENTS ACTING ON BEHALF OF ARIZONA STATE UNIVERSITY |
| 推荐引用方式 GB/T 7714 | TSONG, IGNATIUS S. T.,SMITH, DAVID J.,TORRES, VICTOR M.,et al. Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices. US6306675. 2001-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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