Method of fabricating active layers in a laser utilizing InP-based active regions
文献类型：专利
| 作者 | TANDON, ASHISH; CHANG, YING-LAN |
| 发表日期 | 2005-04-05 |
| 专利号 | US6876686 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating active layers in a laser utilizing InP-based active regions |
| 英文摘要 | A laser and method for making the same are disclosed. The laser includes a p-layer, an n-layer, and an active region located between the p-layer and the n-layer. The active region includes a quantum well layer sandwiched between first and second barrier layers. The quantum well layer includes an InP-based material. The first and second barrier layers also include an InP-based material. The barrier layers are homogeneous layers of the InP-based material. The barrier layers are preferably deposited by chemical vapor deposition from precursors that include a surfactant element that inhibits the formation of P—P dimers on a surface of the barrier layer during the deposition process. In one embodiment, the surfactant element is chosen from the group consisting of Sb, Si, and Te, and the barrier material includes InGaP or AlInP. |
| 公开日期 | 2005-04-05 |
| 申请日期 | 2003-02-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41939]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | TANDON, ASHISH,CHANG, YING-LAN. Method of fabricating active layers in a laser utilizing InP-based active regions. US6876686. 2005-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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