Buried double heterostructure laser device
文献类型：专利
| 作者 | HARTMAN, ROBERT L.; ILEGEMS, MARC; KOSZI, LOUIS A.; WAGNER, WILFRIED R. |
| 发表日期 | 1980-10-28 |
| 专利号 | US4230997 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried double heterostructure laser device |
| 英文摘要 | A buried double heterostructure laser device isdescribed. A wafer of double heterostructure material is formed into narrow mesa stripes. A native oxide coating is formed on the side walls of the mesa. Semiconductor material having an index of refraction which is closely matched to the index of the active region is deposited over the mesa structure. High resistivity polycrystalline material forms on the native oxide and monocrystalline material forms on the top of the mesa. Vertical carrier and optical confinement is achieved by the higher bandgap cladding layers of the double heterostructure configuration. The native oxide acts as an electrical insulator to confine pumping current to the mesa. The closely matched polycrystalline material confines light parallel to the junction plane and prevents excitation of higher order transverse modes. Devices have been fabricated which exhibit cw threshold currents at room temperature as low as 55 mA. |
| 公开日期 | 1980-10-28 |
| 申请日期 | 1979-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42072]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 推荐引用方式 GB/T 7714 | HARTMAN, ROBERT L.,ILEGEMS, MARC,KOSZI, LOUIS A.,et al. Buried double heterostructure laser device. US4230997. 1980-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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