Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures
文献类型：期刊论文
| ; | |
| 作者 | Zhang LB (Zhang L. B.); Zhai F (Zhai Feng); Chang K (Chang Kai); Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. |
| 刊名 | physical review b
 ; PHYSICAL REVIEW B
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 81期号:23页码:art. no. 235323 |
| 关键词 | INSULATOR Insulator Surface Phase SURFACE PHASE |
| 通讯作者 | zhang, lb, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. |
| 合作状况 | 国内 |
| 英文摘要 | we present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2deg) and quantum spin hall (qsh) bar in a hgte/cdte quantum well with inverted band structures. for the 2deg, the transmission shows the fabry-perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. for the qsh bar, the transmission gap is reduced to the edge gap caused by the finite size effect. instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. such a fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.; We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2DEG) and quantum spin Hall (QSH) bar in a HgTe/CdTe quantum well with inverted band structures. For the 2DEG, the transmission shows the Fabry-Perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. For the QSH bar, the transmission gap is reduced to the edge gap caused by the finite size effect. Instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. Such a Fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-18t13:41:57z no. of bitstreams: 1 electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures.pdf: 420782 bytes, checksum: af695f629aeaa4cced87df05026f4515 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-18t13:55:43z (gmt) no. of bitstreams: 1 electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures.pdf: 420782 bytes, checksum: af695f629aeaa4cced87df05026f4515 (md5); made available in dspace on 2010-07-18t13:55:43z (gmt). no. of bitstreams: 1 electron tunneling through a planar single barrier in hgte quantum wells with inverted band structures.pdf: 420782 bytes, checksum: af695f629aeaa4cced87df05026f4515 (md5) previous issue date: 2010; this work was supported by the nsfc (grant nos. 60525405, 10874175, and 10704013) and rfdp (grant no. 200801411042), and the bilateral project between sweden and china.; 国内 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 资助信息 | this work was supported by the nsfc (grant nos. 60525405, 10874175, and 10704013) and rfdp (grant no. 200801411042), and the bilateral project between sweden and china. |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 资助机构 | This work was supported by the NSFC (Grant Nos. 60525405, 10874175, and 10704013) and RFDP (Grant No. 200801411042), and the bilateral project between Sweden and China. |
| 公开日期 | 2010-07-18 ; 2010-07-18 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11368]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhang LB ,Zhai F ,Chang K ,et al. Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures, Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures[J]. physical review b, PHYSICAL REVIEW B,2010, 2010,81, 81(23):art. no. 235323, Art. No. 235323. |
| APA | Zhang LB ,Zhai F ,Chang K ,&Zhang, LB, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China..(2010).Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures.physical review b,81(23),art. no. 235323. |
| MLA | Zhang LB ,et al."Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures".physical review b 81.23(2010):art. no. 235323. |
入库方式： OAI收割
来源：半导体研究所
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