中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Development of wafer level glass frit bonding by using barrier trench technology and precision screen printing

文献类型:期刊论文

作者Chen, X ; Yan, PL ; Tang, JJ ; Xu, GW ; Luo, L
刊名MICROELECTRONIC ENGINEERING
出版日期2012
卷号100页码:6-11
关键词MEMS WLP Glass frit bonding Barrier trench technology (BTT)
ISSN号0167-9317
通讯作者Luo, L (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要A new technology in wafer-level packaging by glass frit bonding is developed for wafer level encapsulation of MEMS devices. To improve the uniformity of the dimension of glass frit, a new barrier trench technology (BTT) is developed during bonding process
学科主题Engineering; Science & Technology - Other Topics; Optics; Physics
收录类别2012SCI-007
原文出处10.1016/j.mee.2012.07.116
语种英语
公开日期2013-04-23
源URL[http://ir.sim.ac.cn/handle/331004/114889]  
专题上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式
GB/T 7714
Chen, X,Yan, PL,Tang, JJ,et al. Development of wafer level glass frit bonding by using barrier trench technology and precision screen printing[J]. MICROELECTRONIC ENGINEERING,2012,100:6-11.
APA Chen, X,Yan, PL,Tang, JJ,Xu, GW,&Luo, L.(2012).Development of wafer level glass frit bonding by using barrier trench technology and precision screen printing.MICROELECTRONIC ENGINEERING,100,6-11.
MLA Chen, X,et al."Development of wafer level glass frit bonding by using barrier trench technology and precision screen printing".MICROELECTRONIC ENGINEERING 100(2012):6-11.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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