Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
文献类型：期刊论文
| 作者 | Ren, WC ; Liu, B ; Song, ZT ; Xiang, YH ; Wang, ZT ; Zhang, BC ; Feng, SL |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2012 |
| 卷号 | 21期号:11页码:115203 |
| 关键词 | deposit-etch-deposit process single step deposit gap filling re-deposition |
| ISSN号 | 1674-1056 |
| 通讯作者 | Liu, B (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality, purity, and accurate composition co |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-019 |
| 原文出处 | 10.1088/1674-1056/21/11/115203 |
| 语种 | 英语 |
| 公开日期 | 2013-04-23 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114892]  |
| 专题 | 上海微系统与信息技术研究所_微系统技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ren, WC,Liu, B,Song, ZT,et al. Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material[J]. CHINESE PHYSICS B,2012,21(11):115203. |
| APA | Ren, WC.,Liu, B.,Song, ZT.,Xiang, YH.,Wang, ZT.,...&Feng, SL.(2012).Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material.CHINESE PHYSICS B,21(11),115203. |
| MLA | Ren, WC,et al."Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material".CHINESE PHYSICS B 21.11(2012):115203. |
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