中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Redistribution of Electrical Interconnections for Three-Dimensional Wafer-Level Packaging With Silicon Bumps

文献类型:期刊论文

作者Wu, GQ ; Xu, DH ; Xiong, B ; Wang, YL
刊名IEEE ELECTRON DEVICE LETTERS
出版日期2012
卷号33期号:8页码:1177-1179
关键词Redistribution of electrical interconnection silicon bumps wafer-level packaging 3-D packaging
ISSN号0741-3106
通讯作者Wu, GQ (reprint author), Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要In this letter, an approach to the redistribution of electrical interconnections is investigated for potential application in 3-D wafer-level packaging. A cap wafer with silicon bumps and electrical feedthroughs is bonded together with a device wafer usin
学科主题Engineering
收录类别2012SCI-078
原文出处10.1109/LED.2012.2200231
语种英语
公开日期2013-04-23
源URL[http://ir.sim.ac.cn/handle/331004/114907]  
专题上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式
GB/T 7714
Wu, GQ,Xu, DH,Xiong, B,et al. Redistribution of Electrical Interconnections for Three-Dimensional Wafer-Level Packaging With Silicon Bumps[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(8):1177-1179.
APA Wu, GQ,Xu, DH,Xiong, B,&Wang, YL.(2012).Redistribution of Electrical Interconnections for Three-Dimensional Wafer-Level Packaging With Silicon Bumps.IEEE ELECTRON DEVICE LETTERS,33(8),1177-1179.
MLA Wu, GQ,et al."Redistribution of Electrical Interconnections for Three-Dimensional Wafer-Level Packaging With Silicon Bumps".IEEE ELECTRON DEVICE LETTERS 33.8(2012):1177-1179.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。