中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP

文献类型:期刊论文

作者Tang, JJ ; Ding, XY ; Geng, F ; Sun, XW ; Luo, L
刊名MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
出版日期2012
卷号18期号:1页码:119-126
ISSN号0946-7076
通讯作者Luo, L (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, 865 Changning Rd, Shanghai 200050, Peoples R China.
中文摘要This paper presents an integration technology for RF passives using benzocyclobutene (BCB)/metal multilayer interconnection for system-in-package applications. This technology has been specially developed for RF subsystem packages in which a thick polymer
学科主题Engineering; Science & Technology - Other Topics; Materials Science; Physics
收录类别2012SCI-239
原文出处10.1007/s00542-011-1370-3
语种英语
公开日期2013-04-23
源URL[http://ir.sim.ac.cn/handle/331004/114943]  
专题上海微系统与信息技术研究所_微系统技术_期刊论文
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GB/T 7714
Tang, JJ,Ding, XY,Geng, F,et al. Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP[J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS,2012,18(1):119-126.
APA Tang, JJ,Ding, XY,Geng, F,Sun, XW,&Luo, L.(2012).Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP.MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS,18(1),119-126.
MLA Tang, JJ,et al."Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP".MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS 18.1(2012):119-126.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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