Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP
文献类型:期刊论文
作者 | Tang, JJ ; Ding, XY ; Geng, F ; Sun, XW ; Luo, L |
刊名 | MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
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出版日期 | 2012 |
卷号 | 18期号:1页码:119-126 |
ISSN号 | 0946-7076 |
通讯作者 | Luo, L (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, 865 Changning Rd, Shanghai 200050, Peoples R China. |
中文摘要 | This paper presents an integration technology for RF passives using benzocyclobutene (BCB)/metal multilayer interconnection for system-in-package applications. This technology has been specially developed for RF subsystem packages in which a thick polymer |
学科主题 | Engineering; Science & Technology - Other Topics; Materials Science; Physics |
收录类别 | 2012SCI-239 |
原文出处 | 10.1007/s00542-011-1370-3 |
语种 | 英语 |
公开日期 | 2013-04-23 |
源URL | [http://ir.sim.ac.cn/handle/331004/114943] ![]() |
专题 | 上海微系统与信息技术研究所_微系统技术_期刊论文 |
推荐引用方式 GB/T 7714 | Tang, JJ,Ding, XY,Geng, F,et al. Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP[J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS,2012,18(1):119-126. |
APA | Tang, JJ,Ding, XY,Geng, F,Sun, XW,&Luo, L.(2012).Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP.MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS,18(1),119-126. |
MLA | Tang, JJ,et al."Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP".MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS 18.1(2012):119-126. |
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