Origin of deep level defect related photoluminescence in annealed InP
文献类型：期刊论文
| 作者 | Zhao, YW (Zhao, Youwen) ; Dong, ZY (Dong, Zhiyuan) ; Miao, SS (Miao, Shanshan) ; Deng, AH (Deng, Aihong) ; Yang, J (Yang, Jun) ; Wang, B (Wang, Bo) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 100期号:12页码:art.no.123519 |
| 关键词 | DOPED SEMIINSULATING INP |
| ISSN号 | issn: 0021-8979 |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn |
| 中文摘要 | deep level defects in annealed inp have been studied by using photoluminescence spectroscopy (pl), thermally stimulated current (tsc), deep level transient spectroscopy (dlts), and positron annihilation lifetime (pal). a noticeable broad pl peak centered at 1.3 ev has been observed in the inp sample annealed in iron phosphide ambient. both the 1.3 ev pl emission and a defect at e-c-0.18 ev correlate with a divacancy detected in the annealed inp sample. the results make a divacancy defect and related property identified in the annealed inp. (c) 2006 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9728]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, YW ,Dong, ZY ,Miao, SS ,et al. Origin of deep level defect related photoluminescence in annealed InP[J]. journal of applied physics,2006,100(12):art.no.123519. |
| APA | Zhao, YW ,Dong, ZY ,Miao, SS ,Deng, AH ,Yang, J ,&Wang, B .(2006).Origin of deep level defect related photoluminescence in annealed InP.journal of applied physics,100(12),art.no.123519. |
| MLA | Zhao, YW ,et al."Origin of deep level defect related photoluminescence in annealed InP".journal of applied physics 100.12(2006):art.no.123519. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。