Strain evolution in GaN layers grown on high-temperature AlN interlayers
文献类型：期刊论文
| 作者 | Wang JF (Wang J. F.) ; Yao DZ (Yao D. Z.) ; Chen J (Chen J.) ; Zhu JJ (Zhu J. J.) ; Zhao DG (Zhao D. G.) ; Jiang DS (Jiang D. S.) ; Yang H (Yang H.) ; Liang JW (Liang J. W.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 89期号:15页码:art.no.152105 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION STRESS EVOLUTION DEFECT STRUCTURE EPITAXIAL GAN THIN-FILMS ALGAN DISLOCATIONS RELAXATION REDUCTION |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang, jf, wuhan univ, dept phys, wuhan 430072, peoples r china. e-mail: wlino@red.semi.ac.cn |
| 中文摘要 | the strain evolution of the gan layer grown on a high-temperature aln interlayer with gan template by metal organic chemical vapor deposition is investigated. it is found that the layer is initially under compressive strain and then gradually relaxes and transforms to under tensile strain with increasing film thickness. the result of the in situ stress analysis is confirmed by x-ray diffraction measurements. transmission electron microscopy analysis shows that the inclination of edge and mixed threading dislocations rather than the reduction of dislocation density mainly accounts for such a strain evolution. (c) 2006 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10352]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang JF ,Yao DZ ,Chen J ,et al. Strain evolution in GaN layers grown on high-temperature AlN interlayers[J]. applied physics letters,2006,89(15):art.no.152105. |
| APA | Wang JF .,Yao DZ .,Chen J .,Zhu JJ .,Zhao DG .,...&Liang JW .(2006).Strain evolution in GaN layers grown on high-temperature AlN interlayers.applied physics letters,89(15),art.no.152105. |
| MLA | Wang JF ,et al."Strain evolution in GaN layers grown on high-temperature AlN interlayers".applied physics letters 89.15(2006):art.no.152105. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。