Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region
文献类型：专利
| 作者 | BOUR, DAVID P.; TAKEUCHI, TETSUYA; TANDON, ASHISH; CHANG, YING-LAN; TAN, MICHAEL R.T.; CORZINE, SCOTT |
| 专利号 | US20030211647A1 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region |
| 英文摘要 | Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 2 um is extracted from the dimethylhydrazine and deposited on the substrate. |
| 公开日期 | 2003-11-13 |
| 申请日期 | 2002-05-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43432]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,TAKEUCHI, TETSUYA,TANDON, ASHISH,et al. Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region. US20030211647A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。