Long-wavelength photonic device with GaAsSb quantum-well layer
文献类型：专利
| 作者 | CHANG, YING-LAN; CORZINE, SCOTT W.; DUPUIS, RUSSELL D.; NOH, MIN SOO; RYOU, JAE HYUN; TAN, MICHAEL R. T.; TANDON, ASHISH |
| 发表日期 | 2004-03-23 |
| 专利号 | US6711195 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Long-wavelength photonic device with GaAsSb quantum-well layer |
| 英文摘要 | The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y>=0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material. |
| 公开日期 | 2004-03-23 |
| 申请日期 | 2002-02-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45707]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | CHANG, YING-LAN,CORZINE, SCOTT W.,DUPUIS, RUSSELL D.,et al. Long-wavelength photonic device with GaAsSb quantum-well layer. US6711195. 2004-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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