Method of forming current confinement channels in semiconductor devices
文献类型：专利
| 作者 | DIXON, RICHARD W.; JOYCE, WILLIAM B.; KOSZI, LOUIS A.; MILLER, RICHARD C.; SCHWARTZ, BERTRAM |
| 发表日期 | 1985-05-07 |
| 专利号 | US4514896 |
| 著作权人 | AT&T BELL LABORATORIES |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of forming current confinement channels in semiconductor devices |
| 英文摘要 | Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region. Also, described are several attenuation masks for fabricating the channels of these devices by particle bombardment. |
| 公开日期 | 1985-05-07 |
| 申请日期 | 1984-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45773]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T BELL LABORATORIES |
| 推荐引用方式 GB/T 7714 | DIXON, RICHARD W.,JOYCE, WILLIAM B.,KOSZI, LOUIS A.,et al. Method of forming current confinement channels in semiconductor devices. US4514896. 1985-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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