Deep quantum well electro-absorption modulator
文献类型：专利
| 作者 | BOUR, DAVID P.; TANDON, ASHISH; TAN, MICHAEL R. T. |
| 发表日期 | 2008-10-28 |
| 专利号 | US7443561 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Deep quantum well electro-absorption modulator |
| 英文摘要 | Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased. |
| 公开日期 | 2008-10-28 |
| 申请日期 | 2005-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46149]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,TANDON, ASHISH,TAN, MICHAEL R. T.. Deep quantum well electro-absorption modulator. US7443561. 2008-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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