Method of improving current confinement in semiconductor lasers by inert ion bombardment
文献类型：专利
| 作者 | HARTMAN, ROBERT L.; KOSZI, LOUIS A.; WILLIAMS, RICHARD S.; ZILKO, JOHN L. |
| 发表日期 | 1985-06-18 |
| 专利号 | US4523961 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of improving current confinement in semiconductor lasers by inert ion bombardment |
| 英文摘要 | A method of producing patternable resistive regions in III-V compound semiconductor devices and a resulting device structure having improved current characteristics. III-V semiconductor substrates are irradiated with inert ions to produce a resistive region therein. At least one epitaxial layer is grown over the substrate while maintaining the resistive characteristics within the substrate. A second resistive region is then formed in at least the top epitaxial layer. This second resistive region is aligned with the first one in order to minimize current spread through the device. |
| 公开日期 | 1985-06-18 |
| 申请日期 | 1982-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47322]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 推荐引用方式 GB/T 7714 | HARTMAN, ROBERT L.,KOSZI, LOUIS A.,WILLIAMS, RICHARD S.,et al. Method of improving current confinement in semiconductor lasers by inert ion bombardment. US4523961. 1985-06-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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