Active region of a light emitting device optimized for increased modulation speed operation
文献类型：专利
| 作者 | TANDON, ASHISH; DJORDJEV, KOSTADIN; LIN, CHAO-KUN; TAN, MICHAEL R.T. |
| 发表日期 | 2006-12-07 |
| 专利号 | US20060274801A1 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Active region of a light emitting device optimized for increased modulation speed operation |
| 英文摘要 | In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers. |
| 公开日期 | 2006-12-07 |
| 申请日期 | 2005-06-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64047]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | TANDON, ASHISH,DJORDJEV, KOSTADIN,LIN, CHAO-KUN,et al. Active region of a light emitting device optimized for increased modulation speed operation. US20060274801A1. 2006-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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