Laser having active region formed above substrate
文献类型：专利
| 作者 | TANDON, ASHISH; CHANG, YING-LAN; BOUR, DAVID |
| 发表日期 | 2004 |
| 专利号 | US20040001521A1 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser having active region formed above substrate |
| 英文摘要 | A semiconductor laser. The semiconductor laser has an indium-phosphide (InP) non-(100) substrate and an active region grown above the substrate. In so doing, embodiments of the present invention provide for the formation of a semiconductor laser with good morphology and low contamination while allowing the use of wide process windows. Opening the process window greatly simplifies the formation process, leads to more consistent results, and achieves better yields under mass production. |
| 公开日期 | 2004 |
| 申请日期 | 2002-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP PTE. LTD. |
| 推荐引用方式 GB/T 7714 | TANDON, ASHISH,CHANG, YING-LAN,BOUR, DAVID. Laser having active region formed above substrate. US20040001521A1. 2004-01-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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