Light emitting semiconductor devices
文献类型：专利
| 作者 | HARTMAN, ROBERT L.; KOSZI, LOUIS A.; SCHUMAKER, NORMAN E. |
| 发表日期 | 1982-01-26 |
| 专利号 | US4313125 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting semiconductor devices |
| 英文摘要 | A double heterostructure light emitting semiconductor device is described wherein a narrow bandgap active region is sandwiched between two wider bandgap cladding layers, one of which contains a p-n homojunction. The purpose is to separate the p-n junction from the active region and, thus, to have the active region bounded by two isotype (p-p or n-n) heterojunctions. This configuration significantly reduces nonradiative interface recombination current which occurs principally at the anisotype (p-n) heterojunction in a standard double heterostructure. |
| 公开日期 | 1982-01-26 |
| 申请日期 | 1979-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79260]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
| 推荐引用方式 GB/T 7714 | HARTMAN, ROBERT L.,KOSZI, LOUIS A.,SCHUMAKER, NORMAN E.. Light emitting semiconductor devices. US4313125. 1982-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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