Method and structure for deep well structures for long wavelength active regions
文献类型：专利
| 作者 | TAN, MICHAEL R. T.; TANDON, ASHISH; BOUR, DAVID P. |
| 发表日期 | 2006-04-20 |
| 专利号 | US20060083278A1 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method and structure for deep well structures for long wavelength active regions |
| 英文摘要 | Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example. |
| 公开日期 | 2006-04-20 |
| 申请日期 | 2004-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88845]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | TAN, MICHAEL R. T.,TANDON, ASHISH,BOUR, DAVID P.. Method and structure for deep well structures for long wavelength active regions. US20060083278A1. 2006-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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