On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes
文献类型：期刊论文
| 作者 | Sheikhi, Moheb; Dai, Yijun; Cui, Mei; Li, Liang; Liu, Jianzhe; Lan, Wenan; Jiang, Rongrong; Guo, Wei; Chee, Kuan W. A.; Ye, Jichun |
| 刊名 | MICROMACHINES
 |
| 出版日期 | 2020 |
| 卷号 | 11期号:6 |
| 关键词 | NITRIDE PERFORMANCE ALGAN/GAN |
| DOI | 10.3390/mi11060572 |
| 英文摘要 | The non-centrosymmetricity of III-nitride wurtzite crystals enables metal or nitrogen polarity with dramatically different surface energies and optical properties. In this work, III-polar and N-polar nanostructured ultraviolet multiple quantum wells (UV-MQWs) were fabricated by nanosphere lithography and reactive ion etching. The influence of KOH etching and rapid thermal annealing treatments on the luminescence behaviors were carefully investigated, showing a maximum enhancement factor of 2.4 in emission intensity for III-polar nanopillars, but no significant improvement for N-polar nanopillars. The discrepancy in optical behaviors between III- and N-polar nanopillar MQWs stems from carrier localization in III-polar surface, as indium compositional inhomogeneity is discovered by cathodoluminescence mapping, and a defect-insensitive emission property is observed. Therefore, non-radiative recombination centers such as threading dislocations or point defects are unlikely to influence the optical property even after post-fabrication surface treatment. This work lays solid foundation for future study on the effects of surface treatment on III- and N-polar nanostructured light-emitting-diodes and provides a promising route for the design of nanostructure photonic devices. |
| 学科主题 | Science & Technology - Other Topics ; Instruments & Instrumentation |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/20754]  |
| 专题 | 2020专题 2020专题_期刊论文 |
| 作者单位 | 1.Guo, W (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 2.Guo, W (corresponding author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China. 3.Chee, KWA (corresponding author), Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China. 4.Chee, KWA (corresponding author), Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China. 5.Chee, KWA (corresponding author), Shandong Acad Sci, Laser Res Inst, Qingdao 226100, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Sheikhi, Moheb,Dai, Yijun,Cui, Mei,et al. On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes[J]. MICROMACHINES,2020,11(6). |
| APA | Sheikhi, Moheb.,Dai, Yijun.,Cui, Mei.,Li, Liang.,Liu, Jianzhe.,...&Ye, Jichun.(2020).On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes.MICROMACHINES,11(6). |
| MLA | Sheikhi, Moheb,et al."On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes".MICROMACHINES 11.6(2020). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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