The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer
文献类型：期刊论文
| 作者 | Xu, YN (Xu, Yannan)[ 1,2 ]; Bi, JS (Bi, Jinshun)[ 1,2 ]; Li, YD (Li, Yudong)[ 3 ] ; Xi, K (Xi, Kai)[ 1 ]; Fan, LJ (Fan, Linjie)[ 4 ]; Liu, M (Liu, Ming)[ 1 ]; Sandip, M (Sandip, M.)[ 5 ]; Luo, L (Luo, Li)[ 6 ]
|
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2019 |
| 卷号 | 100期号:9页码:1-5 |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2019.06.047 |
| 英文摘要 | The total ionizing dose (TID) effects of X-ray irradiation on graphene/HfO2/Si (Gr/HfO2/Si) Schottky diodes were investigated. The I-V characteristics were studied in detail with different bias conditions during TID irradiation. An increase in the ideality factor and decrease in the Schottky barrier height were observed. Compared with traditional graphene/Si (Gr/Si) Schottky structures, the degradation of electrical characteristics can be effectively suppressed by adding a HfO2 insertion layer between graphene and the Si substrate. |
| WOS记录号 | WOS:000503907900149 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/7215]  |
| 专题 | 固体辐射物理研究室 |
| 作者单位 | 1.Beijing Jiaotong Univ, Sch Elect & Informat Engn, Beijing, Peoples R China 2.ICFAI Univ, Dept Sci & Technol, Agartala, India 3.Sichuan Univ, Sch Phys Sci & Technol, Chengdu, Sichuan, Peoples R China 4.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi, Xinjiang, Peoples R China 5.Univ Chinese Acad Sci, Beijing, Peoples R China 6.Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, YN ,Bi, JS ,Li, YD ,et al. The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer[J]. MICROELECTRONICS RELIABILITY,2019,100(9):1-5. |
| APA | Xu, YN .,Bi, JS .,Li, YD .,Xi, K .,Fan, LJ .,...&Luo, L .(2019).The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer.MICROELECTRONICS RELIABILITY,100(9),1-5. |
| MLA | Xu, YN ,et al."The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer".MICROELECTRONICS RELIABILITY 100.9(2019):1-5. |
入库方式： OAI收割
来源：新疆理化技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。