Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor
文献类型：期刊论文
| 作者 | Di Niu; Quan Wang; Wei Li; Changxi Chen; Jiankai Xu; Lijuan Jiang; Chun Feng; Hongling Xiao; Qian Wang; Xiangang Xu; Xiaoliang Wang |
| 刊名 | Japanese Journal of Applied Physics
 |
| 出版日期 | 2020 |
| 卷号 | 59期号:11页码:111001 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30051]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Di Niu; Quan Wang; Wei Li; Changxi Chen; Jiankai Xu; Lijuan Jiang; Chun Feng; Hongling Xiao; Qian Wang; Xiangang Xu; Xiaoliang Wang. Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor[J]. Japanese Journal of Applied Physics,2020,59(11):111001. |
| APA | Di Niu; Quan Wang; Wei Li; Changxi Chen; Jiankai Xu; Lijuan Jiang; Chun Feng; Hongling Xiao; Qian Wang; Xiangang Xu; Xiaoliang Wang.(2020).Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor.Japanese Journal of Applied Physics,59(11),111001. |
| MLA | Di Niu; Quan Wang; Wei Li; Changxi Chen; Jiankai Xu; Lijuan Jiang; Chun Feng; Hongling Xiao; Qian Wang; Xiangang Xu; Xiaoliang Wang."Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor".Japanese Journal of Applied Physics 59.11(2020):111001. |
入库方式： OAI收割
来源：半导体研究所
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